feb.1999 mitsubishi transistor modules QM300HC-M high power switching use non-insulated type outline drawing & circuit diagram dimensions in mm application robotics, welders, forklifts, golf cart QM300HC-M ? i c collector current ........................ 300a ? v cex collector-emitter voltage ........... 350v ? h fe dc current gain............................. 100 ? non-insulated type 94 80 f 5.5 62 48 16 8 25 22 12 12 20 22 eb e bx 64 m4 m6 27 25 21 5.5 8 b bx e e c label
feb.1999 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute b(e) terminal screw m4 bx terminal screw m4 main terminal screw m6 mounting screw m5 typical value ratings 350 350 400 10 300 300 1250 10 3000 C40~+150 C40~+125 0.98~1.47 10~15 0.98~1.47 10~15 1.96~2.94 20~30 1.47~1.96 15~20 420 absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm nm kgcm g mitsubishi transistor modules QM300HC-M high power switching use non-insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 100 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =350v, v eb =2v v cb =400v,emitter open v eb =10v i c =300a, i b =3.0a Ci c =300a (diode forward voltage) i c =300a, v ce =2v v cc =200v, i c =300a, i b1 =Ci b2 =6a transistor part diode part conductive grease applied typ. max. 2.0 2.0 600 2.0 2.5 1.85 2.0 10 3.0 0.1 0.25 0.05
feb.1999 2 10 1 10 0 10 7 5 4 3 2 7 5 4 3 2 1.4 1.6 1.8 2.0 2.2 2.4 0 10 1 10 ? 10 v ce =2.0v t j =25? 7 5 4 3 2 7 5 4 3 2 45 7 2 3 45 7 t j =25? t j =125? i b =3.0a v ce(sat) 1 10 ? 10 0 10 1 10 2 10 2 234 v be(sat) 0 012345 i b =3.0a i b =1.5a i b =0.3a 100 200 300 400 500 t j =25? i b =6.0a i b =0.6a 7 5 4 3 2 2 10 7 5 4 3 2 1 10 57 2 3457 t j =25? t j =125? 3 10 1 10 2 10 2345 v ce =5.0v v ce =2.0v 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 0 t j =25? t j =125? ? 10 444 i c =200a i c =100a i c =400a i c =300a 7 5 4 3 2 7 5 4 3 2 23457 23457 1 10 0 10 1 10 i b1 =? b2 =6.0a v cc =200v ? 10 t s t on t f t j =25? t j =125? 2 10 3 10 performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM300HC-M high power switching use non-insulated type
feb.1999 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 800 0 0 400 700 600 500 400 300 200 100 50 100 150 200 250 300 350 t j =125? i b2 =?a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t c =25? 2 10 3 10 1 10 0 10 3 10 2 10 1 10 0 10 100? 444 dc 10ms 1ms 200? t w =50 ? 0 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 3457 2 3457 1 10 2 23 t j =25? t j =125? v cc =200v i b1 =6a i c =300a t f t s 7 5 3 2 7 5 3 2 7 5 3 2 0.2 2.2 1.8 0.6 1.0 1.4 t j =25? t j =125? 3 10 2 10 1 10 0 10 7 5 3 2 7 5 3 2 7 5 3 2 0.10 0.08 0.06 0.04 0.02 0 444 7 5 3 24 1 10 ? 10 ? 10 ? 10 0 10 0 10 non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM300HC-M high power switching use non-insulated type z th (jCc) ( c/ w)
feb.1999 1 10 7 5 3 2 0 10 7 5 4 3 2 0 400 1200 2000 2800 3200 2 10 4 1600 800 2400 7 5 3 2 7 5 3 2 7 5 3 2 0.4 0.3 0 444 7 5 3 24 0 10 1 10 0.2 0.1 ? 10 ? 10 ? 10 0 10 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t j =25? t j =125? ? b2 =6a i b1 = v cc =200v 3 10 2 10 1 10 0 10 2 10 1 10 0 10 ? 10 0 10 1 10 2 10 3 10 t rr q rr i rr t rr ( m s) i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM300HC-M high power switching use non-insulated type z th (jCc) ( c/ w)
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